A true polysilicon emitter transistor
Abstract
A polysilicon emitter transistor has been fabricated in which the metallurgical base/emitter junction coincides with the interface between polycrystalline and monocrystalline material. The emitter region was formed by deposition of heavily phosphorus-doped polysilicon in an LPCVD reactor at 627 C, a temperature low enough to prevent diffusion of phosphorus into the substrate. Emitter Gummel numbers of over 10 to the 14th scm exp -4 have been obtained with this structure, allowing common emitter current gains in excess of 10,000 to be reached for base implant doses of 10 to the 12th/sq cm.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1985
- DOI:
- 10.1109/EDL.1985.26128
- Bibcode:
- 1985IEDL....6..288R
- Keywords:
-
- Bipolar Transistors;
- Doped Crystals;
- Emitters;
- Semiconductor Junctions;
- Silicon Junctions;
- Vapor Deposition;
- Current Density;
- Ion Implantation;
- Low Temperature;
- Phosphorus;
- Solid-Solid Interfaces;
- Substrates;
- Electronics and Electrical Engineering