A new method for calculating the noise parameters of MESFET's and TEGFET's
Abstract
The analytical formulas presently derived for MESFET and TEGFET intrinsic noise sources on the basis of numerical noise modeling are noted to yield noise figures that are in good agreement with experimental results. The influence of output conductance and gate-to-drain capacitance is discussed, followed by a comparison between the kf factors of MESFETs and TEGFETs.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1985
- DOI:
- Bibcode:
- 1985IEDL....6..270C
- Keywords:
-
- Electromagnetic Noise;
- Field Effect Transistors;
- Gates (Circuits);
- Noise Reduction;
- Schottky Diodes;
- Transistor Amplifiers;
- Correlation Coefficients;
- Electrical Impedance;
- Electrical Resistance;
- Gallium Arsenides;
- Millimeter Waves;
- Electronics and Electrical Engineering