AlGaAs/GaAs MESFET IC with Ni buried gate technology
Abstract
Ni buried gate technology for threshold voltage control using a Ni-GaAs reaction by a heat treatment is developed and successfully applied to AlGaAs/GaAs heterostructure MESFET IC's. Switching delay time of 36.7 ps with the power-delay product of 10 fJ (1-V supply voltage) was obtained at 83 K for a ring oscillator with 1.5 micron gate FET's. This technology, together with the saturated resistor loads, promises to simplify the process for AlGaAs/GaAs MESFET LSI's by not requiring active-layer etching.
- Publication:
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IEEE Electron Device Letters
- Pub Date:
- May 1985
- DOI:
- Bibcode:
- 1985IEDL....6..232M
- Keywords:
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- Aluminum Gallium Arsenides;
- Electric Potential;
- Field Effect Transistors;
- Heterojunction Devices;
- Integrated Circuits;
- Threshold Gates;
- Electron Gas;
- Heat Treatment;
- Molecular Beam Epitaxy;
- Oscillators;
- Schottky Diodes;
- Threshold Voltage;
- Time Lag;
- Electronics and Electrical Engineering