Adjustable crosstalk and blooming suppression in imaging devices

Optical and electrical crosstalk performance of pixels in an integrated p-i-n photocapacitor matrix using RIE grooving of expitaxial Si wafers for isolations has been analyzed. Filled deep trench isolation in the optical devices not only resulted in superior crosstalk and blooming suppression as compared to reported conventional techniques but also provides a practical way for independent control of these effects in integrated one- or two-dimensional imaging arrays.