A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuits
Abstract
A novel thin GaAs lattice-mismatched gate Ga0.47In0.53As field-effect transistor (LMG-FET) is reported. The device shows an extrinsic dc transconductance of 108 mS/mm for a 1.4-micron gate length and 240-micron gate width. Despite a 3.7-percent lattice mismatch between GaAs and Ga0.47In0.53As, the LMG-FET shows stable operation even at 80 C with a 13-percent increase in transconductances, exhibits negligible current drift, and suffers very little change in threshold voltages (less than 0.05 V) under illumination. This technology may find applications in high-speed lightwave transmission as well as high-speed digital circuits.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1985
- DOI:
- 10.1109/EDL.1985.26028
- Bibcode:
- 1985IEDL....6...20C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Indium Arsenides;
- Electrical Resistance;
- Fabrication;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering