The theory and practice of the GaAs microwave power MESFET
Abstract
The physical and technological factors governing the output power available from gallium arsenide microwave MESFETs are reviewed, and some original and hitherto unpublished results on gate-drain avalanche are given, showing it to be one of the principal mechanisms limiting the output power of FETs intended to operate at several tens of gigahertz. Predictions for the conventional parallel-cell FET are extended to 60 GHz. Both circuit and device opportunities for increasing the power output of integrated structures are briefly considered, with the conclusion that 1 kW may eventually be possible at millimetric wavelengths.
- Publication:
-
GEC Journal Research
- Pub Date:
- 1985
- Bibcode:
- 1985GECJR...3..191L
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Equipment;
- Schottky Diodes;
- Electrical Faults;
- Electron Trajectories;
- Equivalent Circuits;
- Power Efficiency;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering