The flicker effect in close collisions between electrons and atoms during molecular channeling
Abstract
The molecular (110) plane channeling of fast electrons in silicon is examined. The following parameters are calculated for electron energies of 1-10 MeV: transverse-energy eigenvalues, the population probability of molecular quantum states, and the yield of close interactions between electrons and atoms of the crystal depending on the orientation between the direction of electron incidence and the plane direction. The population inversion of near-barrier even levels is predicted along with the flicker effect in the energy dependence for the yield of close interactions.
- Publication:
-
Fizika
- Pub Date:
- December 1985
- Bibcode:
- 1985Fiz....28...86V
- Keywords:
-
- Atomic Collisions;
- Electron Scattering;
- Electron Tunneling;
- Molecular Interactions;
- Silicon;
- Single Crystals;
- Electrodynamics;
- Electron Energy;
- Electron States;
- Energy Spectra;
- Molecular Energy Levels;
- Population Inversion;
- Solid-State Physics