661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer
Abstract
Room-temperature (25 C) CW operation of AlGaInP double-heterostructure lasers with an aluminum-containing quaternary active layer is reported for the first time. The active layer is (Al/0.1/Ga/0.9/)/0/5/In/0.5/P. The lasing wavelength is 661.7 nm, which is the shortest ever reported for semiconductor lasers. The threshold current is 120 mA (6.7 kA/sq cm).
- Publication:
-
Electronics Letters
- Pub Date:
- November 1985
- DOI:
- 10.1049/el:19850822
- Bibcode:
- 1985ElL....21.1162K
- Keywords:
-
- Aluminum Compounds;
- Continuous Wave Lasers;
- Gallium Phosphides;
- Indium Phosphides;
- Lasing;
- Semiconductor Lasers;
- Aluminum Coatings;
- Energy Gaps (Solid State);
- Heterojunctions;
- Molecular Beam Epitaxy;
- Organometallic Compounds;
- Vapor Deposition;
- Lasers and Masers