GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50,000
Abstract
A simple mesa GaAlAs/GaAs heterojunction bipolar phototransistor fabricated by LPE growth technique is presented. A high current gain of the order of 50,000 has been obtained and is believed to be the highest ever reported for a bipolar device. The corresponding high sensitivity is about 15,000 A/W for an 800 nm illumination wavelength.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1985
- DOI:
- Bibcode:
- 1985ElL....21.1124C
- Keywords:
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- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Current Amplifiers;
- Heterojunctions;
- Liquid Phase Epitaxy;
- Phototransistors;
- Gallium Arsenides;
- Quantum Efficiency;
- Electronics and Electrical Engineering