High-quality GaAs Schottky diodes fabricated by strained layer epitaxy

High-quality GaAs Schottky diodes have been fabricated using a strained layer to improve the material quality. The epitaxial layer has been isoelectronically doped with In with a concentration of 4 x 10 to the 19th/cu cm. The diodes fabricated on these layers show a reverse current of 100-200 pA up to 50 V reverse-bias voltage at room temperature. The Schottky contact area was 7500 sq microns and the doping concentration 1 x 10 to the 16th/cu cm. An excellent, reproducible ideality factor of 1.02 has been obtained over seven decades of forward current. Results of Schottky diodes fabricated on isoelectronically doped layers in comparison to conventional fabricated devices are reported.