Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers
Abstract
Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers were fabricated from a molecular-beam-grown GRIN-SCH wafer in which a superlattice buffer layer was introduced. Fabricated diodes exhibited excellent lasing characteristics including a very low threshold current of 5 mA with a T sub 0 value as high as 160 K.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1985
- DOI:
- 10.1049/el:19850727
- Bibcode:
- 1985ElL....21.1025W
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Quantum Wells;
- Superlattices;
- Threshold Currents;
- Waveguide Lasers;
- Continuous Wave Lasers;
- Electro-Optics;
- Integrated Circuits;
- Molecular Beam Epitaxy;
- Quantum Efficiency;
- Lasers and Masers