Optimised HEMT structure with an Al(0.45)Ga(0.55)As spacer and an Al(0.20)Ga(0.80)As doped region
Abstract
An optimised HEMT structure with a high 2DEG sheet concentration of 1 x 10 to the 12th per sq cm has been obtained while maintaining a high 77 K electron Hall mobility of 120,000 sq cm/V s. The structure utilizes a 45 percent Al mole fraction AlGaAs barrier and a 20 percent Al mole fraction doped region. It has little or no light sensitivity at 77 K.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1985
- DOI:
- Bibcode:
- 1985ElL....21..925H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Doped Crystals;
- Field Effect Transistors;
- Hall Effect;
- High Electron Mobility Transistors;
- Low Temperature;
- Band Structure Of Solids;
- Electron Density (Concentration);
- Optimization;
- Photosensitivity;
- Electronics and Electrical Engineering