Complementary self-aligned laser by metalorganic chemical vapour deposition
Abstract
A complementary two-step MOCVD growth technique for the self-aligned laser is described which eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the regrowth interface outside the stripe region. Single-longitudinal-mode operation with stable near- and far-field patterns has been obtained to more than twice the laser threshold current.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1985
- DOI:
- 10.1049/el:19850637
- Bibcode:
- 1985ElL....21..903M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Heterojunction Devices;
- Organometallic Compounds;
- Semiconductor Lasers;
- Vapor Deposition;
- Waveguide Lasers;
- Laser Modes;
- Laser Outputs;
- Laser Stability;
- Threshold Currents;
- Lasers and Masers