Improved frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions
Abstract
Very high-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions (SAGM-APDs) is reported. For low multiplication values (M(0) less than or equal to 7) the bandwidth of these APDs is relatively insensitive to the gain and is determined by the hole transit time and the RC time constant. In this gain region bandwidths as high as 5.5 GHz have been achieved. For higher multiplication values the frequency response exhibits a constant gain-bandwidth product. Gain-bandwidth products as high as 40 GHz have been observed.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1985
- DOI:
- 10.1049/el:19850625
- Bibcode:
- 1985ElL....21..886H
- Keywords:
-
- Avalanche Diodes;
- Electro-Optics;
- Frequency Response;
- Gallium Arsenides;
- Heterojunction Devices;
- Indium Phosphides;
- Photodiodes;
- Bandwidth;
- Carrier Mobility;
- Electromagnetic Absorption;
- Indium Arsenides;
- Photomultiplier Tubes;
- Power Gain;
- Rc Circuits;
- Electronics and Electrical Engineering