Effective screen for fast aging InGaAsP BH lasers using electrical derivatives
Abstract
The use of electrical derivatives to predict threshold current degradation rates for InGaAsP, etched mesa BH lasers is reported. Fast aging lasers are found to display a postthreshold I dV/dI temperature dependence which sets them apart from slow agers. This signature is explained in terms of a nonlinear current leakage path in the confinement layers. The use of the I dV/dI temperature signature is proposed as a screen to eliminate fast aging lasers in high-reliability applications.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1985
- DOI:
- 10.1049/el:19850596
- Bibcode:
- 1985ElL....21..846C
- Keywords:
-
- Laser Stability;
- Screen Effect;
- Semiconductor Lasers;
- Threshold Currents;
- Decay Rates;
- Gallium Arsenides;
- Indium Arsenides;
- Indium Phosphides;
- Lasers and Masers