InGaAs PIN photodetectors with modulation response to millimetre wavelengths
Abstract
The transit-time and parasitic limitations on the bandwidth of PIN photodetectors are described and compared with experimental results. Packaged InGaAs photodetectors with measured 3 dB response to 36 GHz (8.3 mm wavelength) have been made.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1985
- DOI:
- Bibcode:
- 1985ElL....21..812B
- Keywords:
-
- Gallium Arsenides;
- Indium Arsenides;
- Millimeter Waves;
- P-I-N Junctions;
- Photometers;
- Bandwidth;
- Electronic Packaging;
- Frequency Response;
- Modulation;
- Electronics and Electrical Engineering