Triple-stripe phase-locked diode lasers emitting 100 mW CW with single-lobed far-field patterns
Abstract
AlGaAs laser arrays with inner stripe configuration have been developed. Transverse mode control was accomplished by introducing nonuniform refractive index and gain distributions, which are built in utilizing growth features of liquid-phase epitaxy. The maximum light outputs are 130 mW and 400 mW in CW and pulsed operation, respectively.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1985
- DOI:
- 10.1049/el:19850549
- Bibcode:
- 1985ElL....21..779O
- Keywords:
-
- Continuous Wave Lasers;
- Far Fields;
- Gallium Arsenide Lasers;
- Phase Locked Systems;
- Aluminum Gallium Arsenides;
- Liquid Phase Epitaxy;
- Near Fields;
- Photodiodes;
- Power Gain;
- Refractivity;
- Lasers and Masers