Tailored-gain broad-area semiconductor laser with single-lobed diffraction-limited far-field pattern
Abstract
A 60 micron wide asymmetric tailored-gain broad-area semiconductor laser with a single-lobed diffraction-limited far-field pattern 2.5 deg wide is demonstrated. The method used to achieve gain tailoring may be used to create nearly arbitrary two-dimensional spatial gain distributions within a broad-area laser.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1985
- DOI:
- 10.1049/el:19850475
- Bibcode:
- 1985ElL....21..671L
- Keywords:
-
- Far Fields;
- Laser Outputs;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Gallium Arsenides;
- Heterojunction Devices;
- Laser Modes;
- Power Gain;
- Lasers and Masers