p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET
Abstract
The first p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET having a p(+)-GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FET fabricated shows a transconductance of gm = 30 mS/mm, a drain conductance of gd k= 2.5 mS/mm and a threshold voltage of Vth = +0.2 V at 77 K in the dark.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1985
- DOI:
- 10.1049/el:19850410
- Bibcode:
- 1985ElL....21..580M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- P-Type Semiconductors;
- Sis (Semiconductors);
- Aluminum Gallium Arsenides;
- Gates (Circuits);
- Threshold Voltage;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering