InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHz
Abstract
InGaAs JFETs were made by LPE growth of the n-channel and zinc diffusion from spin-on films at low temperatures for the p(+)-gate. Extrinsic transconductances in excess of 100 mS/mm for gate lengths of 1.2 microns and frequency limits (MAG = 1) above 30 GHz were obtained. The good agreement between experimentally determined data and those calculated from material parameters and device dimensions indicates that a low-temperature and/or short-time process for gate formation is a necessary prerequisite in InGaAs JFET technology.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1985
- DOI:
- Bibcode:
- 1985ElL....21..449S
- Keywords:
-
- Carrier Mobility;
- Frequency Response;
- Gallium Arsenides;
- Jfet;
- Liquid Phase Epitaxy;
- Microwave Equipment;
- Electro-Optics;
- Electron Gas;
- Indium Arsenides;
- Electronics and Electrical Engineering