2-20 GHz hybrid GaAs MESFET distributed amplifier
Abstract
A hybrid-distributed amplifier using eight 75-microns-gate periphery GaAs MESFETs is reported. The amplifier operates in the 2-20 GHz frequency range with 6.2-dB gain + or - 0.4-dB gain ripple.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1985
- DOI:
- Bibcode:
- 1985ElL....21..376V
- Keywords:
-
- Distributed Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Network Synthesis;
- Power Gain;
- Schottky Diodes;
- Electronics and Electrical Engineering