Improved high-power twin-channel laser with blocking layer
Abstract
An improved version of the twin-channel laser is presented as a prototype for a new concept in semiconductor laser-array structures with a well controlled far-field beam pattern. The laser device constitutes the first CW semiconductor laser-array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilization and efficiency over previous structures.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1985
- DOI:
- Bibcode:
- 1985ElL....21..337M
- Keywords:
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- Gallium Arsenide Lasers;
- High Power Lasers;
- Laser Applications;
- P-Type Semiconductors;
- Continuous Wave Lasers;
- Far Fields;
- Substrates;
- Lasers and Masers