Effect of magnetic field on n(+) nn(+) GaAs ballistic diode
Abstract
An improved method is proposed for utilizing the magnetic field effect on ac impedance in testing ballistic electron transport in a short n(+) nn(+) GaAs diode at 77 K. A lumped RLC equivalent circuit representation is given. It is noted that a detailed analysis with a nonuniform electric field including Poisson's equation will also give a distributed LCR representation allowing better quantitative estimates.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1985
- DOI:
- 10.1049/el:19850205
- Bibcode:
- 1985ElL....21..286T
- Keywords:
-
- Cyclotron Frequency;
- Electrical Impedance;
- Gallium Arsenides;
- Magnetic Effects;
- Semiconductor Diodes;
- Ballistic Trajectories;
- Current Density;
- Electron Diffusion;
- Magnetic Fields;
- Mean Free Path;
- Monte Carlo Method;
- Rlc Circuits;
- Electronics and Electrical Engineering