High-efficiency monolithic GaAs IMPATT diodes
Abstract
Impedance-matching circuits were integrated on the same chip as the IMPATT diodes to produce monolithic IMPATT diodes for millimeter-wave applications. A drastic reduction of device-to-circuit parasitic elements was achieved by placing the external circuitry very close to the device. Oscillators fabricated in this fashion gave the highest efficiencies reported so far in the 30-35 GHz range with 28 percent conversion efficiency using hybrid-Read structures.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1985
- DOI:
- Bibcode:
- 1985ElL....21..259B
- Keywords:
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- Avalanche Diodes;
- Gallium Arsenides;
- Impedance Matching;
- Integrated Circuits;
- Power Efficiency;
- Dielectrics;
- Electronic Packaging;
- Heat Sinks;
- Microwave Oscillators;
- Millimeter Waves;
- Polyimides;
- Substrates;
- Electronics and Electrical Engineering