Enhanced performance of 2-micron N-MOSFETs in doubly recrystallised SOS films
Abstract
The field-effect channel electron mobility in 0.5-micron-thick silicon-on-sapphire films is increased by up to 22 percent, while the back-channel leakage current is decreased 100-fold, following a double recrystallization by means of Si ion implantation/amorphization and solid-phase epitaxy. The improved electrical performance correlates with a more than 100-fold reduction in the microtwin density, as measured by X-ray diffraction.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1985
- DOI:
- Bibcode:
- 1985ElL....21..154M
- Keywords:
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- Field Effect Transistors;
- Recrystallization;
- Semiconducting Films;
- Sos (Semiconductors);
- Fabrication;
- Film Thickness;
- Ion Implantation;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering