Low-noise HEMT fabricated by MOCVD

Low-noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapor deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148,000 sq cm/V s at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0.8-micron-long gate have exhibited a noise figure of 1.47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.