Modelling dc characteristics of HEMTs
Abstract
A simple empirical equation is presented to relate the drain current to drain-source and gate-source voltages of high electron mobility transistors (HEMTs). The equation covers the entire range of ID/VDS characteristics. The accuracy of the empirical equation is found to be better than the combined accuracy of several separate theoretical equations.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1985
- DOI:
- Bibcode:
- 1985ElL....21...69A
- Keywords:
-
- Aluminum Gallium Arsenides;
- Direct Current;
- Gallium Arsenides;
- Heterojunction Devices;
- Transistors;
- Volt-Ampere Characteristics;
- Computer Aided Design;
- Differential Equations;
- Electron Mobility;
- Mathematical Models;
- Electronics and Electrical Engineering