Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers
Abstract
InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs(0.61)P(0.39) substrates by hydride vapor-phase epitaxy. By optimizing growth conditions and device structure, a threshold current density as low as 5.6 kA/sq cm is obtained, and CW operation is achieved up to -27 C.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1985
- DOI:
- 10.1049/el:19850038
- Bibcode:
- 1985ElL....21...54U
- Keywords:
-
- Continuous Wave Lasers;
- Heterojunction Devices;
- Lasing;
- Semiconductor Lasers;
- Threshold Currents;
- Vapor Phase Epitaxy;
- Gallium Arsenides;
- Gallium Phosphides;
- Indium Arsenides;
- Indium Phosphides;
- Lasers and Masers