Determination of drift mobility and carrier concentration in semiconductors using surface acoustic wave amplifier structure
Abstract
Experimental data are analyzed in order to determine the electric field at which synchronism occurs in a semiconductor piezoelectric amplifier structure. In the interaction region the electron mobility of a sample of high resistivity silicon is measured to be on the order of 1268 sq cm/V s. The carrier concentration is deduced as a result of the comparison between experimental and theoretical results.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1985
- DOI:
- Bibcode:
- 1985ElL....21...32B
- Keywords:
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- Amplifier Design;
- Carrier Density (Solid State);
- Electron Mobility;
- Surface Acoustic Wave Devices;
- Wave Amplification;
- Delay Lines;
- Electrical Resistivity;
- Lithium Niobates;
- Piezoelectric Crystals;
- Electronics and Electrical Engineering