GaAlAs semiconductor diode laser 4-ary frequency shift key modulation at 100 Mbit/s
Abstract
4-ary FSK modulation of a semiconductor diode laser by injection current modulation has been demonstrated at a rate of 100 Mbit/s. The injection current modulator has a modular design which allows expansion to M-ary FSK with independent control of each tone frequency. The design allows considerable flexibility in the logical relationship between the source data and the selected frequency tones.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1985
- DOI:
- Bibcode:
- 1985ElL....21...12W
- Keywords:
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- Aluminum Gallium Arsenides;
- Frequency Shift Keying;
- Light Modulation;
- Semiconductor Lasers;
- Channel Capacity;
- Frequency Control;
- Optical Communication;
- Power Spectra;
- Lasers and Masers