Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes
Abstract
The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillimeter-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 10 to the 17th per cu cm.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1985
- DOI:
- Bibcode:
- 1985ElL....21....2K
- Keywords:
-
- Gallium Arsenides;
- Hot Electrons;
- Mixing Circuits;
- Schottky Diodes;
- Submillimeter Waves;
- Thermal Noise;
- Capacitance;
- Electromagnetic Noise Measurement;
- Low Noise;
- Noise Temperature;
- Platinum;
- Electronics and Electrical Engineering