Gallium arsenide enhances digital signal processing in electronic warfare
Abstract
The higher electron mobility and velocity of GaAs digital signal processing IC devices for electronic warfare (EW) allow operation times that are several times faster than those of ICs based on silicon. Particular benefits are foreseen for the response time and broadband capability of ECM systems. Many data manipulation methods can be implemented in emitter-coupled logic (ECL) GaAs devices, and digital GaAs RF memories are noted to show great promise for improved ECM system performance while encompassing microwave frequency and chirp signal synthesis, repeater jamming, and multiple false target generation. EW digital frequency synthesizers are especially in need of GaAS IC technology, since bandwidth and resolution have been limited by ECL technology to about 250 MHz.
- Publication:
-
Defense Electronics
- Pub Date:
- July 1985
- Bibcode:
- 1985DefEl..17...48H
- Keywords:
-
- Digital Systems;
- Electronic Warfare;
- Gallium Arsenides;
- Signal Processing;
- Vhsic (Circuits);
- Electronic Countermeasures;
- Frequency Synthesizers;
- High Electron Mobility Transistors;
- Jammers;
- Logical Elements;
- Memory (Computers);
- Microwave Equipment;
- Response Time (Computers);
- Electronics and Electrical Engineering