GaAs metal-thin-insulator-semiconductor Schottky barrier FET with highly-doped channel

The dc output characteristics of a GaAs M-I Schottky barrier FET (MIS SB FET) having a highly doped channel and a dual gate structure are studied theoretically. The effect of inclusion of a thin oxidized layer was analyzed, and estimates of the small signal and microwave parameters were calculated within the framework of the two-region model. Measurements of the dc output characteristics and gate-source capacitance of a high-GaAs content MIS SB FET were carried out in order to confirm the theoretical results. The peak carrier concentration of the MIS SB FET was 0.5-1 x 10 to the 18th per cu cm. It is found that the measured dc output characteristics and gate source capacitance were in agreement with the theoretical results.