A modeling system for simulation of GaAs FET performance

A new computer system for predicting field effect transistor (FET) performance is described which can be used extensively for design optimization, troubleshooting the fabrication process, and tailoring performance by varying the fabrication process parameters. The computer programs are based on the physics governing the operation of FETs and input parameters are chosen which relate closely to the fabrication process. The intrinsic physics of FET devices is covered as it relates to the modeling and computation strategies. The usefulness of the system is illustrated by modeling a GaAs power FET.