Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy
Abstract
(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1985
- DOI:
- 10.1063/1.96084
- Bibcode:
- 1985ApPhL..47..599B
- Keywords:
-
- Cadmium Tellurides;
- Gallium Arsenides;
- Heterojunctions;
- Molecular Beam Epitaxy;
- Crystal Defects;
- Focal Plane Devices;
- Photoluminescence;
- Semiconducting Films;
- Substrates;
- X Ray Diffraction;
- Solid-State Physics