Time-resolved kinetics of e-h plasma in GaAsP under intense picosecond laser pulse excitation
Abstract
Time-resolved photoluminescence kinetics of GaAs1-xPx (x=0.38) were measured by a streak camera system in order to determine the radiative and nonradiative recombination rates. The photoluminescence decay profile was found to be intensity dependent. When excitation power fluence increased above 6×108 W/cm2, the decay profile of emission deviated from exponential form. This is attributed to bimolecular and Auger processes. The bimolecular and Auger rates were determined to be BR=9×10-10 cm3/s and CNR=3×10-29 cm6/s by fitting the time-resolved photoluminescence decay profiles to the solution of the rate equation which describes the dynamical behavior of the photogenerated carriers.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1985
- DOI:
- 10.1063/1.95576
- Bibcode:
- 1985ApPhL..46..513Z
- Keywords:
-
- Gallium Arsenides;
- High Power Lasers;
- Phosphides;
- Photoluminescence;
- Picosecond Pulses;
- Radiative Recombination;
- Auger Effect;
- Carrier Density (Solid State);
- Fluence;
- Room Temperature;
- Transient Response;
- Solid-State Physics