Molecular beam epitaxial growth of In1 - xGaxAs1 - ySby lattice matched to GaSb
Abstract
We have succeeded in growing epitaxial layers and multilayer heterostructures of In1-xGaxAs1-ySby quaternary and InAs0.92Sb0.08 ternary alloys lattice matched to GaSb by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a∼8×10-4, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection high-energy electron diffraction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 1985
- DOI:
- 10.1063/1.95659
- Bibcode:
- 1985ApPhL..46..283T
- Keywords:
-
- Gallium Antimonides;
- Heterojunction Devices;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Quaternary Alloys;
- Crystal Lattices;
- Energy Gaps (Solid State);
- Gallium Arsenides;
- Indium Antimonides;
- X Ray Diffraction;
- Solid-State Physics