Investigation of the MBE growth of InSb and novel quantum well structures

The prime objectives of this contract are twofold: (1) the preparation and characterization of InSb/CdTe interfaces to investigate the existence of a two dimensional electron gas confined in the InSb by the interface potential; (2) the preparation and characterization of InSb films grown onto lattice-matched CdTe substrates. In this period, the reproducible preparation of high purity, high perfection CdTe films on ion-cleaned InSb substrates and on InSb buffer layers on InSb substrates has been achieved. The techniques of cross-section transmission transmission electron microscopy (XTEM), double crystal X-ray rocking curve analysis (DCRC), He(+) ion channeling, photoluminescence, far infrared magneto-absorption and C-V profiling have been used to study the CdTe film and interface properties.