Investigation of charge coupled devices for signal processing
Abstract
New constant capacitance voltage transient methods are developed. Traps from ion implantation damage are profiled and characterized. New methods of determination of both majority and minority carrier capture rates at traps in one diode is developed. Two-dimensional numerical analyses with new boundary equations are demonstrated for micron and submicron silicon MOS devices. Dangling bound and hydrogen bonding of interface states and bulk dopant acceptor (boron) traps are experimentally demonstrated.
- Publication:
-
Final Technical Report
- Pub Date:
- February 1984
- Bibcode:
- 1984uill.reptR....S
- Keywords:
-
- Charge Carriers;
- Charge Coupled Devices;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Signal Processing;
- Traps;
- Boron;
- Constraints;
- Correlators;
- Damage;
- Equivalent Circuits;
- Hydrogen;
- Impurities;
- Noise Measurement;
- Numerical Analysis;
- Rates (Per Time);
- Reaction Bonding;
- Semiconductor Diodes;
- Silicon;
- Electronics and Electrical Engineering