Formation of silicide contacts using codeposited refractory metals alloy films

Contact reactions of a Si substrate and thin films of co-deposited two refractory metals have been studied. Three systems have been chosen Ta-V, Ta-W and Ti-V. As reference also two bilayer structures for each system have been studied (e.g., Ta/W/Si and W/Ta/Si for the Ta-W system). In each system the dependence of the interaction with Si on annealing temperature and on alloy composition is investigated. The interdiffusion and silicide formation have been analyzed by Auger electron spectroscopy and X-ray diffraction.