LSI/VLSI (Large Scale Integration/Very Large Scale Integration) ion implanted GaAs (Gallium Arsenide) IC processing. Appendix B: Two-dimensional modeling of GaAs MESFET devices for integrated high-speed logic circuits

This report summarizes the research carried out at North Carolina State University in support of the Rockwell International Program on LSI-VLSI Ion Implanted Planar GaAs IC Processing. The major thrust of the program at NCSU was to develop accurate computer models for analyzing the performance of short-channel GaAs MESFET devices as used in the Rockwell VLSI circuits. The modeling research is divided into three parts: (1) Two-dimensional finite difference simulation, (2) Two-dimensional Monte Carlo analysis, and (3) Analytical modeling. The intent was to use the two-dimensional analyses to give exact solutions to the device operation and to serve as a guide for developing a simpler, and less expensive, analytical model of sufficient accuracy to be valuable as a design aid and to study effects of parameter changes.