Use of polyimides in VLSI fabrication
Abstract
The functional requirements of overcoats and multilevel insulators for very large scale integrated circuits (VLSI) are outlined. The moisture barrier properties of polyimide films are reviewed. Polyimide performance vs plasma enhanced chemically vapor deposited (CVD) silicon nitride overcoats are compared. The topological and via forming advantages of polyimides vs plasma enhanced CVD silicon oxide as a multilevel insulator are cited. The temperature and voltage field induced electronic charge transport and trapping at oxide interfaces is cited as the most serious limitation to the use of polyimides as multilevel insulators on VLSI chips.
- Publication:
-
IN: Polyimides: Synthesis
- Pub Date:
- 1984
- Bibcode:
- 1984psca....2..715W
- Keywords:
-
- Fabrication;
- Integrated Circuits;
- Multilayer Insulation;
- Polyimides;
- Polymeric Films;
- Very Large Scale Integration;
- Charge Transfer;
- Electric Fields;
- Electron Transfer;
- Moisture Resistance;
- Silicon Nitrides;
- Technology Utilization;
- Temperature Effects;
- Vapor Deposition;
- Electronics and Electrical Engineering