Time-resolved studies of ultrarapid solidification of highly undercooled molten silicon formed by pulsed laser irradiation
Abstract
Results of nanosecond resolution time resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si implanted amorphous (a) silicon layers are reported. Model calculations and postirradiation TEM measurements, allow the study of both the transformation of a-Si to a highly undercooled liquid (1) phase and the subsequent ultrarapid solidification process.
- Publication:
-
Presented at the 17th Intern. Conf. on the Phys. of Semiconductors
- Pub Date:
- July 1984
- Bibcode:
- 1984psc..conf....6L
- Keywords:
-
- Laser Heating;
- Laser Outputs;
- Pulsed Lasers;
- Silicon;
- Solidification;
- Amorphous Materials;
- Irradiation;
- Reflectance;
- Lasers and Masers