Thirty GHz low noise GaAs FET amplifiers
Abstract
Selection and characterization of transmission media, and characterization of a 0.3 micron gate length gallium arsenide MESFET usable to 30 GHz, was undertaken to provide a data base for the design of an integrated amplifier for satellite communications. An amplifier configuration was chosen to achieve the ESA specification, and single stage amplifier modules were designed and tested. Integration of these modules into a complete high gain amplifier with temperature compensation and operating between WG22 interfaces is achieved. Tests against the full performance specification were conducted.
- Publication:
-
Final Report Plessey Co. Ltd
- Pub Date:
- September 1984
- Bibcode:
- 1984pcl..rept.....O
- Keywords:
-
- Amplifier Design;
- Extremely High Frequencies;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Spacecraft Communication;
- Equipment Specifications;
- Microstrip Transmission Lines;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering