P-I-N CdTe gamma-ray detectors by Liquid Phase Epitaxy (LPE)
Abstract
A new device concept of CdTe gamma ray detectors was demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n(+)-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm(2) were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co(57) at room temperature.
- Publication:
-
Presented at the Nucl. Sci. Symp
- Pub Date:
- 1984
- Bibcode:
- 1984nusc.sympR....S
- Keywords:
-
- Gamma Rays;
- Liquid Phase Epitaxy;
- P-I-N Junctions;
- Radiation Detectors;
- Cadmium Tellurides;
- Energy Gaps (Solid State);
- Ion Implantation;
- Surface Reactions;
- Thin Films;
- Instrumentation and Photography