Transient response of a small-signal microwave GaAs FET to X-rays
Abstract
Microwave power output of a submicron-gate GaAs FET, containing no buffer layer, is observed to recover within one hundred nanoseconds after the X-ray pulse from a FEBETRON 705 source. The FET is formed by implanting ions into the substrate, grown with a liquid encapsulated Czochralski method and doped lightly with chromium.
- Publication:
-
Presented at the 21st IEEE Ann. Conf. on Nucl. and Space Radiation Effects
- Pub Date:
- August 1984
- Bibcode:
- 1984nsre.conf.....C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Equipment;
- Radiation Effects;
- Transient Response;
- Additives;
- Bandwidth;
- Chromium;
- Ion Implantation;
- Substrates;
- Electronics and Electrical Engineering