Crystal growth of device quality GaAs in space
Abstract
The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.
- Publication:
-
Massachusetts Inst. of Tech. Report
- Pub Date:
- July 1984
- Bibcode:
- 1984mit..reptQ....G
- Keywords:
-
- Crystal Growth;
- Gallium Arsenides;
- Semiconductor Devices;
- Semiconductors (Materials);
- Space Processing;
- Weightlessness;
- Crystal Defects;
- Electron Mobility;
- Impurities;
- Melts (Crystal Growth);
- Microstructure;
- Space Commercialization;
- Stoichiometry;
- Solid-State Physics