Oxide charge characteristics of low temperature MOS (Metal-Oxide-Silicon) oxide films
Abstract
The effects of annealing sequence were studied on three types of silicon dioxide films fabricated at approximately 700 deg C. The oxide and interface charge characteristics of capacitors incorporating these oxides were measured. Results were compared with data from capacitors fabricated on a standard oxide film, produced by dry thermal oxidation at 1000 deg C.
- Publication:
-
Final Report
- Pub Date:
- August 1984
- Bibcode:
- 1984lehi.rept.....B
- Keywords:
-
- Annealing;
- Fabrication;
- Low Temperature;
- Oxide Films;
- Silicon Dioxide;
- Thin Films;
- Capacitors;
- Dielectrics;
- Electrical Properties;
- Integrated Circuits;
- Oxidation;
- Oxides;
- Electronics and Electrical Engineering