Novel techniques for the fabricating and characterization of GaAs MIS (Metal Insulator Semiconductor) structures

Organometallic chemical vapor deposition (OMCVD) of Al2O3 on GaAs has been investigated as a means of fabricating metal-insulator-semiconductor field effect transistors (MISFET). Deposition at temperatures less than 400C forms high-quality films of Al2O3. Diffusion can alter the composition during high-temperature anneals. In-situ etching of the GaAs just prior to depositing the Al2O3 markedly reduced surface generation velocities, but inversion at the interface was not conclusively demonstrated.