Studies of grown-in defects versus growth parameters in 3-4 compound semiconductors
Abstract
The objectives of this research are to conduct: (1) A detailed analysis of the grown-in defects and radiation induced defects in GaAs and other 3-4 materials grown by the LEC, VPE, LPE, and MOCVD techniques under different growth and annealing conditions, (2) Theoretical modelling of the native defects for identifying the physical origins of the deep-level traps in GaAs and other III-V materials, (3) Theoretical and experimental study of the potential well of electron traps from analyzing the electric field enhanced emission rates deduced from the nonexponential DLTS data, and (4) Study of one-MeV electron irradiation induced deep-level defects in GaAs, AlGaAs, and InP materials. The main research accomplishments are summarized.
- Publication:
-
Annual Technical Report
- Pub Date:
- June 1984
- Bibcode:
- 1984fugv.reptQ....L
- Keywords:
-
- Crystal Defects;
- Crystal Growth;
- Gallium Arsenides;
- Indium Phosphides;
- Semiconductors (Materials);
- Electrons;
- Independent Variables;
- Mathematical Models;
- Radiation Effects;
- Traps;
- Solid-State Physics